2N7228 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk 4/99 v gs gate C source voltage i d continuous drain current (v gs = 10v , t case = 25c) i d continuous drain current (v gs = 10v , t case = 100c) i dm pulsed drain current 1 p d power dissipation @ t case = 25c linear derating factor e as single pulse avalanche energy 2 i ar avalanche current 1 e ar repetitive avalanche energy 1 dv/dt peak diode recovery 3 t j , t stg operating and storage temperature range t l lead temperature measured 1 / 16 (1.6mm) from case for 10 sec. r q jc thermal resistance junction to case r q cs thermal resistance case to sink (typical) r q ja thermal resistance junction to ambient 20v 12a 8a 48a 150w 1.2w/c 750mj 12a 15mj 3.5v/ns C55 to 150c 300c 0.83c/w 0.21c/w 48c/w mechanical data dimensions in mm (inches) 123 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) 3.78 (0.149) dia. 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800) 3.81 (0.150) bsc 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) bsc absolute maximum ratings (t case = 25c unless otherwise stated) toC254aa C metal package notes 1) repetitive rating C pulse width limited by maximum junction temperature 2) @ v dd = 50v , l 3 9.4mh , r g = 25 w , peak i l = 12a , starting t j = 25c 3) @ i sd 12a , di/dt 130a/ m s , v dd bv dss , t j 150c , suggested r g = 2.35 w nCchannel power mosfet features ? hermetically sealed isolated package ? avalanche energy rating ? simple drive requirements ? also available in a surface mount package ? ease of paralleling pin 1 C drain pin 2 C source pin 3 C gate v dss 500v i d(cont) 12a r ds(on) 0.415 w w
parameter test conditions min. typ. max. unit 2N7228 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk 4/99 v gs = 0 i d = 1ma reference to 25c i d = 1ma v gs = 10v i d = 8a v gs = 10v i d = 12a v ds = v gs i d = 250 m a v ds 3 15v i ds = 8a v gs = 0 v ds = 0.8bv dss t j = 125c v gs = 20v v gs = C20v v gs = 0 v ds = 25v f = 1mhz v gs = 10v i d = 12a v ds = 0.5bv dss v dd = 250v i d = 12a r g = 2.35 w i s = 12a t j = 25c v gs = 0 i f = 12a t j = 25c d i / d t 100a/ m sv dd 50v electrical characteristics (t amb = 25c unless otherwise stated) drain C source breakdown voltage temperature coefficient of breakdown voltage static drain C source onCstate resistance 2 gate threshold voltage forward transconductance 2 zero gate voltage drain current forward gate C source leakage reverse gate C source leakage input capacitance output capacitance reverse transfer capacitance drain C case capacitance total gate charge gate C source charge gate C drain (miller) charge turnC on delay time rise time turnCoff delay time fall time continuous source current pulse source current 1 diode forward voltage 2 reverse recovery time 2 reverse recovery charge 2 forward turnCon time 500 0.68 0.415 0.515 24 6.5 25 250 100 C100 2700 600 240 12 55 120 519 27 70 35 190 170 130 12 48 1.7 1600 14 negligible 8.7 8.7 v v/c w v s ( w m a na pf nc ns a v ns m c nh bv dss d bv dss d t j r ds(on) v gs(th) g fs i dss i gss i gss c iss c oss c rss c dc q g q gs q gd t d(on) t r t d(off) t f i s i sm v sd t rr q rr t on l d l s static electrical ratings 1) repetitive rating C pulse width limited by maximum junction temperature 2) pulse test: pulse width 300 m s, d 2% *i s current limited by pin diameter. notes dynamic characteristics internal drain inductance measured from 6mm down drain lead to centre of die internal source inductance measured from 6mm down source lead to source bond pad package characteristics source C drain diode characteristics ( w )
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